Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee
Type
Label
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee
Language
eng
Bibliography note
Includes bibliographical references (p. 11-12)
resource.governmentPublication
federal national government publication
Illustrations
chartsillustrations
Index
no index present
Literary Form
non fiction
Main title
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching
Nature of contents
bibliographytechnical reportsdictionaries
Oclc number
74275409
Responsibility statement
Fred Semendy, Phillip Boyd, and Unchul Lee
Series statement
ARL-TR, 3370
Creator
Content
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Outgoing Resources
- Contributor3
- Creator1
- Subject2
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