Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee
Label
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee
Note
Title from PDF title screen (viewed on Aug. 10, 2010)"November 2004."
Color
mixed
Dimensions
unknown
Form Of Item
online
resource.govDocClassificationNumber
D 101.133:3370
resource.gpoItemNumber
0324-A-01 (online)
Physical Description
1 online resource (iv, 15 pages), illustrations (chiefly color), color charts.
Specific Material Designation
remote
System control number
.b19552270
resource.typeOfReport
Final report.
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Publication
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