Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications, Fred Semendy [and three others]
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Contributor
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Author
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Label
Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications, Fred Semendy [and three others]
Language
eng
Bibliography note
Includes bibliographical references (pages 11-12)
resource.governmentPublication
federal national government publication
Illustrations
illustrations
Index
no index present
Literary form
non fiction
Main title
Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications
Nature of contents
technical reportsbibliographydictionaries
Oclc number
824557063
Responsibility statement
Fred Semendy [and three others]
Series statement
ARL-TR, 6128
Incoming Resources
- Has instance1