Understanding light-induced degradation of c-Si solar cells, preprint, Bhushan Sopori ... [and others]
Type
Label
Understanding light-induced degradation of c-Si solar cells, preprint, Bhushan Sopori ... [and others]
Language
eng
Abstract
We discuss results of our investigations toward understanding bulk and surface components of light-induced degradation (LID) in low-Fe c-Si solar cells. The bulk effects, arising from boron-oxygen defects, are determined by comparing degradation of cell parameters and their thermal recovery, with that of the minority-carrier lifetime (T) in sister wafers. We found that the recovery of T in wafers takes a much longer annealing time compared to that of the cell. We also show that cells having SiN:H coating experience a surface degradation (ascribed to surface recombination). The surface LID is seen as an increase in the q/2kT component of the dark saturation current (J02). The surface LID does not recover fully upon annealing and is attributed to degradation of the SiN:H-Si interface. This behavior is also exhibited by mc-Si cells that have very low oxygen content and do not show any bulk degradation
Bibliography note
Includes bibliographical references (p. 5-6)
resource.biographical
contains biographical information
resource.governmentPublication
federal national government publication
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illustrations
Index
no index present
Literary Form
non fiction
Main title
Understanding light-induced degradation of c-Si solar cells
Nature of contents
bibliographydictionaries
Oclc number
811083404
Responsibility statement
Bhushan Sopori ... [and others]
Series statement
Conference paper NREL/CP, 5200-54200
Sub title
preprint
Contributor
Content
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Outgoing Resources
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- Subject3
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