The Resource Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee, (electronic resource)

Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee, (electronic resource)

Label
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching
Title
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching
Statement of responsibility
Fred Semendy, Phillip Boyd, and Unchul Lee
Creator
Contributor
Subject
Language
eng
Member of
Cataloging source
DTICE
http://library.link/vocab/creatorName
Semendy, Fred
Government publication
federal national government publication
Illustrations
  • illustrations
  • charts
Index
no index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
  • technical reports
http://library.link/vocab/relatedWorkOrContributorName
  • Boyd, Phillip
  • Lee, Unchul
  • U.S. Army Research Laboratory
Series statement
ARL-TR
Series volume
3370
http://library.link/vocab/subjectName
  • Plasma etching
  • Gallium nitride
Type of report
Final report.
Label
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee, (electronic resource)
Link
http://purl.access.gpo.gov/GPO/LPS125009
Instantiates
Publication
Note
  • Title from PDF title screen (viewed on Aug. 10, 2010)
  • "November 2004."
Bibliography note
Includes bibliographical references (p. 11-12)
Color
mixed
Control code
74275409
Dimensions
unknown
Extent
1 online resource (iv, 15 p.)
Form of item
online
Other physical details
ill. (chiefly col.), col. charts.
Specific material designation
remote
Label
Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching, Fred Semendy, Phillip Boyd, and Unchul Lee, (electronic resource)
Link
http://purl.access.gpo.gov/GPO/LPS125009
Publication
Note
  • Title from PDF title screen (viewed on Aug. 10, 2010)
  • "November 2004."
Bibliography note
Includes bibliographical references (p. 11-12)
Color
mixed
Control code
74275409
Dimensions
unknown
Extent
1 online resource (iv, 15 p.)
Form of item
online
Other physical details
ill. (chiefly col.), col. charts.
Specific material designation
remote

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